SiC

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KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

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SiC

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SiC

Major capability parameter Growth method MOCVD Crystal Structure M6 Unit cell constant a=3.08 Å c=15.08 Å Sequence ABCACB Direction <0001> 3.5 º With clearance 2.93 eV Hardness 9.2(mohs) Heat travels ...

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